JPH0750736Y2 - ストレージキャパシタ付きｔｆｔパネル - Google Patents
ストレージキャパシタ付きｔｆｔパネルInfo
- Publication number
- JPH0750736Y2 JPH0750736Y2 JP1265189U JP1265189U JPH0750736Y2 JP H0750736 Y2 JPH0750736 Y2 JP H0750736Y2 JP 1265189 U JP1265189 U JP 1265189U JP 1265189 U JP1265189 U JP 1265189U JP H0750736 Y2 JPH0750736 Y2 JP H0750736Y2
- Authority
- JP
- Japan
- Prior art keywords
- storage capacitor
- electrode
- gate
- insulating film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 title claims description 162
- 239000010408 film Substances 0.000 claims description 178
- 239000010409 thin film Substances 0.000 claims description 53
- 239000002184 metal Substances 0.000 claims description 47
- 229910052751 metal Inorganic materials 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 32
- 238000009792 diffusion process Methods 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 31
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 230000002950 deficient Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1265189U JPH0750736Y2 (ja) | 1989-02-07 | 1989-02-07 | ストレージキャパシタ付きｔｆｔパネル |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1265189U JPH0750736Y2 (ja) | 1989-02-07 | 1989-02-07 | ストレージキャパシタ付きｔｆｔパネル |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02104328U JPH02104328U (en]) | 1990-08-20 |
| JPH0750736Y2 true JPH0750736Y2 (ja) | 1995-11-15 |
Family
ID=31222280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1265189U Expired - Lifetime JPH0750736Y2 (ja) | 1989-02-07 | 1989-02-07 | ストレージキャパシタ付きｔｆｔパネル |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0750736Y2 (en]) |
-
1989
- 1989-02-07 JP JP1265189U patent/JPH0750736Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02104328U (en]) | 1990-08-20 |
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